Three-waveform bidirectional pumping of single electrons with a silicon quantum dot

نویسندگان

  • Tuomo Tanttu
  • Alessandro Rossi
  • Kuan Yen Tan
  • Akseli Mäkinen
  • Kok Wai Chan
  • Andrew S. Dzurak
  • Mikko Möttönen
چکیده

Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon quantum dot single-electron pump with radio frequency control over the transparencies of entrance and exit barriers as well as the dot potential. We show that our driving protocol leads to robust bidirectional pumping: one can conveniently reverse the direction of the quantized current by changing only the phase shift of one driving waveform with respect to the others. We anticipate that this pumping technique may be used in the future to perform error counting experiments by pumping the electrons into and out of a reservoir island monitored by a charge sensor.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Simulation of Direct Pumping of Quantum Dots in a Quantum Dot Laser

In this paper, the nonlinear rate equations governing a quantum dot laser isused to simulate the transient as well as the steady-state behaviors of the laser.Computation results show that the rate equations are capable of simulating true behaviorof a quantum dot laser. Then, the pump rates of the rate equations (which show indirectelectrical pumping of the quantum dots through a wetting layer) ...

متن کامل

Bidirectional counting of single electrons.

A bidirectional single-electron counting device is demonstrated. Individual electrons flowing in forward and reverse directions through a double quantum dot are detected with a quantum point contact acting as a charge sensor. A comprehensive statistical analysis in the frequency and time domains and of higher order moments of noise reveals antibunching correlation in single-electron transport t...

متن کامل

Stacked quantum dot transistor and charge- induced confinement enhancement

As the size of a transistor continuously scales down, single electron effects become important [1 – 3]. Previously, we have studied charge transport in single-electron quantum dot transistors which have a channel consisting of a silicon dot separated from the source and the drain by two constrictions [4], and in single-electron MOS memories that have a polysilicon dot floating gate stacked on a...

متن کامل

Energy states and exchange energy of coupled double quantum dot in a magnetic field

The ground state energies of two interacting electrons confined in a coupled double quantum dot (DQD) presented in a magnetic field has been calculated by solving the relative Hamiltonian using variational and exact diagonalization methods. The singlet-triplet transitions in the angular momentum and spin of the quantum dot ground state had been shown .We have studied the magnetic field versus c...

متن کامل

Energy states and exchange energy of coupled double quantum dot in a magnetic field

The ground state energies of two interacting electrons confined in a coupled double quantum dot (DQD) presented in a magnetic field has been calculated by solving the relative Hamiltonian using variational and exact diagonalization methods. The singlet-triplet transitions in the angular momentum and spin of the quantum dot ground state had been shown .We have studied the magnetic field versus c...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016